Annealing effects on Cu(In,Ga)Se₂ solar cells irradiated by high-fluence proton beam

Abstract Radiation tolerance of Cu(In,Ga)Se 2 (CIGS) solar cells has been investigated using high-fluence proton beam irradiation for application to devices in extremely-high-radiation environment. CIGS deteriorated after high-energy with non-ionizing energy loss 1 × 10 16 MeV n eq /cm , however, the could generate power irradiation. The ideality factors increased from 1.3 2.0, and series resistance increased, indicating that concentration recombination centers layers. After heat-light annealing, conversion efficiencies gradually recovered, were confirmed be partly passivated by annealing at 90 °C. short-circuit currents 10-μm-thick recovered dark same manner as 2-μm-thick cells. Dark on irradiated beneficial effects passivate even thicker